| Abstrak / Catatan | This is a comprehensive, state-of-the-art survey of the materials
properties and device technology of this important semiconductor
alloy which can be grown epitaxially on InP substrates. The
book is divided into three parts: (1) material preparation, including
crystal growth and ion implantation; (2) physics of
GalnAsP, including band structure, .Electronic, and optical
properties; and (3) GalnAsP devicesji'ncluding the technology
and performance of optical and electronic devices.
This full and authoritative treatment of the GalnAsP/InP
system will be an essential text for anyone whose interests
include semiconductor optoelectronics and its applications in
optical fibre telecommunications, integrated optics, and highspeed
electron devices.
Contents
Preface
I INTRODUCTION
II EPITAXIAL CRYSTAL GROWTH
1 Vapour-phase Epitaxy of GalnAsP
G. H. Olsen
2 Liquid-phase Epitaxy
K. Nakajima
3 Gao 47In0 53As/InP and GalnAsP/InP Double Heterostructures
Grown by Low-pressure Metal-organic Vapourphase
Epitaxy
J. P. Hirtz, M. Razeghi, M. Bonnet, and J. P. Duchemin
4 III—V Alloy Growth by Molecular-beam Epitaxy
C. E. C. Wood
5 Ion Implantation
F. H. Eisen and L. R. Tomasetta
6 High-purity Material
E. G. Stillman, L. W. Cook, T. J. Roth, T. S. Low, and
B. J. Skromme
III GalnAsP MATERIALS PROPERTIES
7 Defect Motion and Growth of Extended Non-radiative
Defect Structures in GalnAsP
W. D. Johnston, Jr
8 Low-field Carrier Mobility
J. R. Hayes, A. R. Adams, and P. D. Greene
9 Low-field Transport Calculations
Y. Takeda
10 Hot Electron Transport in n-type Ga^^In^ASyPi^Alloys
Lattice-matched to InP
M. A. Littlejohn, T., H. Glisson, and J. R. Hauser
11 High-field Transport Measurement
R. F. Leheny
12 Electronic Structure of GaJn^ASyP,.,, Alloys Latticematched
to InP
T. P. Pearsall
13 Photoluminescence and Optical Gain of GalnAsP
E. O. Goebel
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